Multi-target magnetron sputtering equipment DB-500B

Description

Model

Specification

Usage

Other

Magnetron

Sputtering

Equipment

DB-500B

Ultimate cacuuum:8x10^-5Pa

Sputtering chamber:φ500

Preparation chamber:φ400

Target：3xφ60

Sample size:φ50

Sample heated temperature：400℃

Back the fire: 700℃

；DC1000W

Sputtering power: RF 500W; DC500W

Plasma clean

Sample transmission:Revolted and rotated

Gas flow  system:2-MFC,

Flow control

Used for the production of 

metal films,medium

 films,semiconduct or films 

and metal films

Suitable for scientific research.

Can

Options:Computer

Process control

System.